| 发明名称 |
Process for fabricating a thin film transistor |
| 摘要 |
There is Disclosed a semiconductor device comprising a silicon film formed on a substrate having at least a surface formed of an insulative material, the silicon film being heat-treated at a temperature below 600 DEG C. and being partially coated with a silicon oxide film formed by electronic cyclotron resonance plasma CVD.
|
| 申请公布号 |
US5811323(A) |
申请公布日期 |
1998.09.22 |
| 申请号 |
US19960724235 |
申请日期 |
1996.09.27 |
| 申请人 |
SEIKO EPSON CORPORATION |
发明人 |
MIYASAKA, MITSUTOSHI;LITTLE, THOMAS W. |
| 分类号 |
H01L21/30;H01L21/336;H01L29/49;H01L29/786;(IPC1-7):H01L21/00;H01L21/331 |
主分类号 |
H01L21/30 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
