| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for growing a single crystal capable of stably growing the single crystal of a dispersion melting type compd. while controlling the growth bearing of this single crystal. SOLUTION: A raw material rod 24 and a seed crystal 25 are welded as shown in (A). Next, the heating is stopped as shown in (B) and an upper shaft 22a is moved in synchronization with a lower shaft. The end on the side opposite to the weld zone of the raw material rod 24 is heated and melted to form a melt zone 26 as shown in (C). Next, the upper shaft 22a and the lower shaft are moved in synchronization, by which the melt zone 26 is moved to the joint part C between the raw material rod 24 and the seed crystal 25 as shown in (D). Seeding is then executed by bringing the melt zone 26 into contact with the seed crystal 25 as shown in (E). Next, the melt zone 26 is moved from the joint part C side of the raw material rod 24 to the other end side and the melting by heating and the solidifying by cooling are continuously executed, by which the single crystal 28 is grown. |
