| 摘要 |
PROBLEM TO BE SOLVED: To obtain excellent thermal conductivity, sliding characteristics and chipping resistance by incorporating silicon and silicon carbide having a specified or smaller average grain size in a specified weight ratio. SOLUTION: A single powder of silicon carbide having <=2μm average particle size, preferably <=1μm, or a mixture powder of silicon carbide and carbon powder of <=2μm average particle size by <=50 pts.wt., preferably 10 to 40 pts.wt. to 100 pts.wt. of silicon carbide, is compacted by cold hydrostatic press forming. Then the compacted body is heated at 600 to 800 deg.C in vacuum to obtain a calcined body of a specified density. The calcined body is impregnated with molten metal silicon and heated at 1,500 to 1,700 deg.C which is higher than the melting point 1,410 deg.C of the silicon, in vacuum for 1 to 4 hours to obtain a composite sintered body containing 10 to 40wt.% silicon and the balance silicon carbide having <=2μm average grain size. |
