| 摘要 |
PURPOSE:To obtain an improved peak versus valley ratio of current in a negative resistance by forming a quantum well on the surface of a compound semiconductor 111 and by including at least one-layer distortion layer containing, within a crystal, internal stress generated by the difference in lattice constant in the quantum well layer. CONSTITUTION:An N-GaAs contact layer 2a is allowed to grow on the plane of (111) B of an N<+>-GaAs substrate 1 then AlyGa1-yAs barrier layer 3a, an InxGa1-xAs quantum well layer 4, an AlyGa1-yAs barrier layer 3b, and an N- GaAs contact layer 2b are allowed to grow in sequence. After that, ohmic electrodes 10a and 10b are formed. Although, the original lattice constant of the InxGa1-xAs quantum well layer 4 is larger than that of the N<+>-GaAs substrate 1, the thickness is selected to be fully thinner than that generating dislocation due to the difference in lattice constant so that the quantum well layer 4 is a layer with compression stress elastically uniformly distorted. Thus, it is possible to obtain an improved peak versus valley ration of current owing to internal electric field generated by distortion. |
