| 发明名称 |
POLYORGANOSILANES AND BILAYER POSITIVE MASK FOR POLYORGANOSILANE-BASE PHOTOLITHOGRAPHY |
| 摘要 |
FIELD: organic chemistry. SUBSTANCE: invention proposes polyorganosilanes of the formula (I) <EMI ID=0.528 HE=18 WI=33 TI=CHI> where R<SB>1</SB> is ethyladamantyl. ethyl(dimethyladamantyl); R<SB>2</SB> is methyl, phenyl; R<SB>3</SB> is methyl, phenyl, cyclohexyl; m = 2-3000; n = 2-3000; m : n = 1:(0.1-10) that can be used in microelectronics for making positive mask for photolithography. EFFECT: improved method of polyorganosilanes synthesis. 2 tbl, 1 dwg, 8 exy
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| 申请公布号 |
RU2118964(C1) |
申请公布日期 |
1998.09.20 |
| 申请号 |
RU19920003409 |
申请日期 |
1992.11.02 |
| 申请人 |
GOSUDARSTVENNYJ NAUCHNO-ISSLEDOVATEL'SKIJ INSTITUTNENIJ;KHIM I T EHLEMENTOORGANICHESKI |
发明人 |
TIKHONOVICH T.V.;IVANOV V.V.;BASHKIROVA S.A.;CHERNYSHEV E.A. |
| 分类号 |
C08G77/02;G03F7/039;G03F7/075;(IPC1-7):C08G77/02 |
主分类号 |
C08G77/02 |
| 代理机构 |
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