Silicon-on-Isolator cells, e.g. for IGBT, MOS controlled thyristor, FET power semiconductor

摘要

The cell has at least one insulation layer (2) formed in a semiconductor body (1), on which a doped polycrystalline zone (5) of given conductivity is grown. The polycrystalline zone is provided with a semiconductor region (6) which lies around the outside or the inside edge of the insulation layer, given a required doping by diffusion of the doping material from the polycrystalline zone. The semiconductor body may be provided with a doping source (3) for a doping material of opposite conductivity type via an ion implantation process.