发明名称 Method for making a thin film on a support and resulting structure
摘要 The present invention relates to a production method for a thin film on a support that includes an ionic implantation stage in order to demarcate the thin film in a substrate, the aim of the ionic implantation being to create a layer of micro-cavities in the substrate, a stage to bond the substrate to a support element using close contact and a heat treatment stage intended to bring the layer of micro-cavities to a temperature that is high enough to cause a split along said layer. At least one of said elements, substrate or support, is thinned before the heat treatment stage in order to maintain the close contact between the substrate and the support despite the stresses caused in the elements and resulting from the difference in their thermal dilation coefficients.
申请公布号 WO9820543(A3) 申请公布日期 1998.09.17
申请号 WO1997FR01969 申请日期 1997.11.04
申请人 COMMISARIAT A L'ENERGIE ATOMIQUE;ASPAR, BERNARD;BRUEL, MICHEL;BARGE, THIERRY 发明人 ASPAR, BERNARD;BRUEL, MICHEL;BARGE, THIERRY
分类号 H01L21/265;H01L21/02;H01L21/304;H01L21/762;H01L27/12 主分类号 H01L21/265
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