发明名称 |
SEMICONDUCTOR SUBSTRATE HAVING COMPOUND SEMICONDUCTOR LAYER, PROCESS FOR ITS PRODUCTION, AND ELECTRONIC DEVICE FABRICATED ON SEMICONDUCTOR SUBSTRATE |
摘要 |
<p>In a semiconductor substrate comprising a silicon substrate having a porous region, and a semiconductor layer provided on the porous region, the semiconductor layer comprises a single-crystal compound and is formed on the surface of the porous region with its pores having been sealed at the surface. This substrate can be produced by a process comprising the steps of heat-treating the silicon substrate having a porous region, to seal pores at the surface of the porous region, and forming a single-crystal compound-semiconductor layer by heteroepitaxial growth on the porous region having the pores sealed by the heat treatment. Single-crystal compound-semiconductor films with less crystal defects can be formed on large-area silicon substrates in a high productivity, a high uniformity, a high controllability and a great economical advantage.</p> |
申请公布号 |
CA2231625(A1) |
申请公布日期 |
1998.09.17 |
申请号 |
CA19982231625 |
申请日期 |
1998.03.09 |
申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
SATO, NOBUHIKO;YONEHARA, TAKAO |
分类号 |
H01L21/20;H01L21/205;H01L21/3063;H01L31/0693;H01L31/18;H01L33/34;(IPC1-7):H01L29/04;H01L21/324 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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