发明名称 |
MOS-gated semiconductor devices |
摘要 |
<p>A gate electrode control structure of an MOS-gated semiconductor device includes four doped regions including a first (source) region forming a first P-N junction with an enclosing composite region comprising a second, lightly doped (channel) region wholly enclosing a third heavily doped (body) region partly enclosing the first region, and a fourth (drain) region forming a P-N junction with the third region. The gate electrode control structure is fabricated using known gate electrode self-alignment doping processes but, in the process for forming the third heavily doped region, a spacer layer is provided on the gate electrode for defining a spacing between the third region and the channel region. <IMAGE></p> |
申请公布号 |
EP0865080(A2) |
申请公布日期 |
1998.09.16 |
申请号 |
EP19980104281 |
申请日期 |
1998.03.10 |
申请人 |
HARRIS CORPORATION |
发明人 |
NEILSON, JOHN MANNING;STOKES, RICHARD DOUGLAS;KOCON, CHRISTOPHER BOGUSLAW;BRUSH, LINDA SUSAN;BENJAMIN, JOHN LAWRENCE;SKURKEY, LOUIS ELLEN;REXER, CHRISTOPHER LAWRENCE |
分类号 |
H01L29/78;H01L21/331;H01L21/336;H01L29/06;H01L29/10;(IPC1-7):H01L21/331;H01L29/739 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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