发明名称 Deposited film forming process, deposited film forming apparatus and process for manufacturing semiconductor element
摘要 <p>A process for forming a deposited film, a process for manufacturing a semiconductor element and a process for manufacturing a photoelectric conversion element are disclosed which each comprises a step of forming a first conductivity type semiconductor layer comprising a non-monocrystalline semiconductor on a substrate, a step of forming a substantially i-type semiconductor layer comprising an amorphous semiconductor on the first conductivity type semiconductor layer, a step of forming a substantially i-type semiconductor layer comprising a microcrystalline semiconductor on the substantially i-type semiconductor layer comprising the amorphous semiconductor while decreasing the film forming rate thereof and a step of forming a second conductivity type semiconductor layer comprising a non-monocrystalline semiconductor on the substantially i-type semiconductor layer comprising the microcrystalline semiconductor. Further, a process for forming a deposited film, a process for manufacturing a semiconductor element and a process for manufacturing a photoelectric conversion element are disclosed which each comprises a step of forming a first conductivity type semiconductor layer comprising a non-monocrystalline semiconductor on a substrate, a step of forming a substantially i-type semiconductor layer comprising an amorphous semiconductor on the first conductivity type semiconductor layer, a step of forming a substantially i-type semiconductor layer comprising a microcrystalline semiconductor on the substantially i-type semiconductor layer comprising the amorphous semiconductor and a step of forming a second conductivity type semiconductor layer comprising a non-monocrystalline semiconductor on the substantially i-type semiconductor layer comprising the microcrystalline semiconductor while increasing the film forming rate thereof. Thereby, a photoelectric conversion element having a high photoelectric conversion efficiency can be obtained with a high productivity. <IMAGE></p>
申请公布号 EP0865087(A2) 申请公布日期 1998.09.16
申请号 EP19980104187 申请日期 1998.03.09
申请人 CANON KABUSHIKI KAISHA 发明人 YAJIMA, TAKAHIRO;FUJIOKA, YASUSHI;OKABE, SHOTARO;KANAI, MASAHIRO;OHTOSHI, HIROKAZU;SAKAI, AKIRA;SAWAYAMA, TADASHI;KOHDA, YUZO
分类号 H01L31/02;H01L31/105;H01L31/20;(IPC1-7):H01L31/20 主分类号 H01L31/02
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