发明名称 |
Deposited film forming process, deposited film forming apparatus and process for manufacturing semiconductor element |
摘要 |
<p>A process for forming a deposited film, a process for manufacturing a semiconductor element and a process for manufacturing a photoelectric conversion element are disclosed which each comprises a step of forming a first conductivity type semiconductor layer comprising a non-monocrystalline semiconductor on a substrate, a step of forming a substantially i-type semiconductor layer comprising an amorphous semiconductor on the first conductivity type semiconductor layer, a step of forming a substantially i-type semiconductor layer comprising a microcrystalline semiconductor on the substantially i-type semiconductor layer comprising the amorphous semiconductor while decreasing the film forming rate thereof and a step of forming a second conductivity type semiconductor layer comprising a non-monocrystalline semiconductor on the substantially i-type semiconductor layer comprising the microcrystalline semiconductor. Further, a process for forming a deposited film, a process for manufacturing a semiconductor element and a process for manufacturing a photoelectric conversion element are disclosed which each comprises a step of forming a first conductivity type semiconductor layer comprising a non-monocrystalline semiconductor on a substrate, a step of forming a substantially i-type semiconductor layer comprising an amorphous semiconductor on the first conductivity type semiconductor layer, a step of forming a substantially i-type semiconductor layer comprising a microcrystalline semiconductor on the substantially i-type semiconductor layer comprising the amorphous semiconductor and a step of forming a second conductivity type semiconductor layer comprising a non-monocrystalline semiconductor on the substantially i-type semiconductor layer comprising the microcrystalline semiconductor while increasing the film forming rate thereof. Thereby, a photoelectric conversion element having a high photoelectric conversion efficiency can be obtained with a high productivity. <IMAGE></p> |
申请公布号 |
EP0865087(A2) |
申请公布日期 |
1998.09.16 |
申请号 |
EP19980104187 |
申请日期 |
1998.03.09 |
申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
YAJIMA, TAKAHIRO;FUJIOKA, YASUSHI;OKABE, SHOTARO;KANAI, MASAHIRO;OHTOSHI, HIROKAZU;SAKAI, AKIRA;SAWAYAMA, TADASHI;KOHDA, YUZO |
分类号 |
H01L31/02;H01L31/105;H01L31/20;(IPC1-7):H01L31/20 |
主分类号 |
H01L31/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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