Electrode for semiconductor device and method of manufacturing it

摘要

A semiconductor device comprising a semiconductor substrate having active regions electrically isolated from each other on a predetermined surface thereof, and a single layer or multilayer electrode line arranged on said semiconductor substrate through an insulating layer, wherein at least one layer of said electrode line is close-packed plane oriented, and a full width at half maximum of a close-packed plane diffraction profile ofθ-scan as a measure of an orientation distribution being less than 6 DEG , and said full width at half maximum of the close-packed plane diffraction profile ofθ-scan is measured by using X-ray diffraction.