发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE WITH ITS LAYOUT DESIGNED BY THE CELL BASE METHOD
摘要 <p>On a feed-through cell (40) and a cap cell (41), there are formed in advance basic cells of gate electrodes (13), and a pair of P-type diffused layers (10a, 10b) and N-type diffused layers (11a, 11b). As a result, even if the design is changed after the layout diagrams were made, a logic circuit can be formed from the basic pairs, so that the design change can be flexibly coped with.</p>
申请公布号 WO1998040913(P1) 申请公布日期 1998.09.17
申请号 JP1997000763 申请日期 1997.03.11
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