ANTIREFLEXSCHICHT UND VERFAHREN ZUR LITHOGRAFISCHEN STRUKTURIERUNG EINER SCHICHT
摘要
A thick layer formed of aSi or aSi/aSiN is used as an antireflection layer (3) in the lithographic structuring of layers (2) on a semiconductor substrate (1). A reflection suppression is based on absorption in the aSi layer and on interference in the aSiN layer. An optical decoupling of the background is achieved, with the result that the antireflection layer can be used universally.
申请公布号
AT170009(T)
申请公布日期
1998.09.15
申请号
AT19930918993T
申请日期
1993.09.14
申请人
SIEMENS AKTIENGESELLSCHAFT
发明人
KUESTERS, KARL-HEINZ, DR.;KUEPPER, PAUL, DR.;CZECH, GUENTER;JOSWIG, HELLMUT, DR.