发明名称 Microcrystal silicon thin film transistor
摘要 The disclosure relates to a microcrystal silicon thin film transistor; The transistor includes a substrate, a gate electrode formed on the substrate, an insulating film formed on the substrate, a non-doped microcrystal silicon film formed on the insulating film, and source and drain electrodes which are formed on the microcrystal film. In the transistor, there is provided an ohmic contact between the source and drain electrodes through the microcrystal silicon film. The insulating film optionally has an etched surface layer prepared by etching the insulating film which has been formed on the substrate, with an aqueous solution containing HF. The TFT can be produced in a simple manner with safety and with a simple equipment.
申请公布号 US5808316(A) 申请公布日期 1998.09.15
申请号 US19960653566 申请日期 1996.05.24
申请人 CENTRAL GLASS COMPANY, LIMITED;AGENCY OF INDUSTRIAL SCIENCE 发明人 MATSUDA, AKIHISA;KONDO, MICHIO;CHIDA, YOSHIHIKO
分类号 H01L21/336;H01L29/49;H01L29/786;(IPC1-7):H01L29/76;H01L27/108;H01L23/62 主分类号 H01L21/336
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