Insulated gate transistor drive circuit

摘要

The cutoff process of a collector current of an insulated gate transistor is divided into an emitter-to-collector voltage recovery period and a collector current cutoff period. During the emitter-to-collector voltage recovery period the resistance of a gate resistor of the transistor is reduced, and during the collector current cutoff period the resistance of the gate resistor is increased. With this arrangement, the cutoff time is shortened, thereby reducing switching loss and suppressing surge voltage.