| 摘要 |
A thin-film transistor circuit, which is used as a driving circuit for driving pixels in an image display, is constituted of a plurality of thin-film transistors that are formed on an insulating substrate. In each thin-film transistor, a conductive electrode is placed so as to face a gate electrode with a channel region of a polycrystal silicon thin-film that forms an active layer located in between. Here, a constant voltage is applied to the conductive electrode. When threshold voltage is shifted by applying a voltage to the conductive electrode, it is possible to allow the absolute value of the threshold voltage of n-channel-type transistors and the absolute value of the threshold voltage of p-channel-type transistors to become virtually equal to each other. Moreover, it is possible to properly set the threshold voltage in accordance with factors such as the channel length of the thin-film transistors, the types of circuits that are constituted of the thin-film transistors and voltages to be applied to the thin-film transistors. Thus, it becomes possible to remarkably improve the characteristics of thin-film transistor circuits, such as operation speeds and holding characteristics.
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