发明名称 Solving production down time with parallel low pressure sensors
摘要 An in-process method and apparatus for monitoring and correcting or replacing a low pressure sensor that gives incorrect low pressure readings because of being contaminated or defective during the formation of integrated circuit structures in a low pressure chemical vapor deposition chamber, where deposition rates are a function of gas flow, temperature, and chamber pressure.
申请公布号 US5808175(A) 申请公布日期 1998.09.15
申请号 US19970868471 申请日期 1997.06.03
申请人 VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION 发明人 CHANG, SHEN-YAN
分类号 G01L19/06;G01L27/00;(IPC1-7):G01L27/00 主分类号 G01L19/06
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