发明名称 Polycrystalline semiconductor thin film for semiconductor TFT on a substrate having a mobility in a longitudinal direction greater than in a width direction
摘要 A polycrystalline semiconductor thin film formed in a stripe shape on an insulating substrate wherein crystal particles are arranged in a line-texture form in a longitudinal direction of a stripe; an electric field effect mobility nu L in a longitudinal direction of a stripe is different from an electric field effect mobility nu S in a width direction of the stripe, and nu L>/=1.5x nu S is satisfied.
申请公布号 US5808318(A) 申请公布日期 1998.09.15
申请号 US19970827446 申请日期 1997.03.28
申请人 AG TECHNOLOGY CO., LTD. 发明人 MASUMO, KUNIO;KUNIGITA, MASAYA
分类号 H01L21/20;H01L27/12;H01L29/786;(IPC1-7):H01L21/336 主分类号 H01L21/20
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