| 摘要 |
A vertical cavity laser emission component emitting via the surface at a wavelength lying in the range 1.3 mu m to 1.55 mu m, the component comprising a stack having two mirrors which reflect at the emission wavelength, plus one or more layers which are interposed between the two mirrors and which constitute an amplifying medium for the emitted radiation, wherein, in the vicinity of the amplifying medium, at least one of the mirrors presents a layer of AlxGa1-xAs where x lies in the range 0.8 to 1, which layer is selectively oxidized around an active central zone of the amplifying medium. In the method, two samples are grown epitaxially, one on an InP substrate and the other on a GaAs substrate, the two samples obtained in this way are assembled together by epitaxial adhesion of a GaAs layer of the second sample on an InP layer of the first sample, and the resulting sample is subsequently etched and then oxidized by hydrolysis.
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