| 摘要 |
PROBLEM TO BE SOLVED: To provide an error corrector which improves the reliability by detecting a defect of a memory element before executing an error correction. SOLUTION: In a memory test mode, a switching signal 102 is made active, a test signal 106 is outputted to a memory element 5 by a test mode switching device 4 to conduct a memory test of the memory element 5, when it is confirmed that the memory function of the whole addresses of the memory element 5 is normal, an operation mode becomes normal, the switching signal 102 is made inactive and a normal operation signal 104 is outputted to the memory element 5 to correct an error of a reproduction signal 108 stored in the memory element 5. Consequently, the defect of the memory element 5 can be detected before executing the error correction and the reliability of the error correction is improved. |
