发明名称 MANUFACTURING METHOD OF LEAD FRAME FOR SEMICONDUCTOR DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To avoid the decline in the solder wettability of Pd or Pd alloy film, by a method wherein a lead frame formed of Pd or Pd alloy film on a platelike raw material in water solution of an electrolyte is used as a cathode to make a potential difference from an anode for producing hydrogen, by supplying a current for a specific time in a specific density. SOLUTION: In a water solution containing an electrolyte, a lead frame formed of a Pd2 film or Pd alloy film on a planner raw material is assumed as a cathode to make a potential difference from an anode as the counter electrode to reform the lead frame, by the hydrogen produced by supplying a current for a specific time in a specific density. In such a constitution, the decline in the solder wettability of Pd or Pd alloy film can be avoided by restoring an oxide formed by the high temperature thermal stress, in the junction time of a semiconductor device to a metal by the reducing action of the hydrogen absorbed in the Pd film 2 or Pd alloy film.</p>
申请公布号 JPH10247716(A) 申请公布日期 1998.09.14
申请号 JP19970048663 申请日期 1997.03.04
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 TANAKA HISAHIRO
分类号 B23K1/20;H01L23/50;(IPC1-7):H01L23/50 主分类号 B23K1/20
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