| 摘要 |
PROBLEM TO BE SOLVED: To record information at high speed by forming a cantilever beam-like tip having a bend on a cantilever of a single crystal silicon layer substrate. SOLUTION: A Si single crystal substrate 101 and an Si single crystal lever 102 constituting a cantilever are arranged via an insulating layer 103. Impurities are doped in the Si single crystal lever 102, and therefore a resistance value is made approximately not larger than 0.01Ωcm and, a thickness is approximately 0.1-severalμm. A thickness of the insulating layer 103 is approximately 0.1-1μm. A cantilever bean-like tip 104 projecting upward is formed at a leading end part of the Si single crystal level 102. The tip 104 is obtained by coating a highly elastic material 105 of silicon nitride, silicon carbide or the like of approximately 0.1-1μm film thickness with a conductive thin film 106 of Pt, Au, W or the like of approximately 200-500nm film thickness. The Si signal crystal lever 102 is connected with the conductive thin film 106, and a wiring 107 is formed at the other end. In the structure, a stray capacity to a recording medium is reduced, thereby enabling information to be recorded at higher speed. |
