| 摘要 |
PROBLEM TO BE SOLVED: To reduce an in-plane temperature difference and a thermal shock which occur in a wafer to an irreducible minimum when it is loaded into or unloaded from a high-temperature over by a method wherein a transfer fork is formed of transparent material which transmits infrared rays, and supports which are formed of black body and support wafer to be processed are provided to the transfer fork. SOLUTION: A fork 15 is formed of transparent body which transmits infrared rays and is high in heat-resistant properties, it is preferable that the fork 15 is formed of material such as transparent quartz which scarcely serves as a pollution source which contaminates a wafer W, and protrudent supports 17 which support the underside of a wafer W at two or more points are provided to the recessed part 16 of the fork 15. The protrudent supports 17 are formed of black body which absorbs infrared rays and is high in heat resistance, and it is preferable that the protrudent supports 17 are formed of material such as silicon carbide which scarcely serves as a pollution source which contaminates a wafer W. The silicon carbide support 17 is formed like a mushroom or a pin. The fork 15 is transparent, so that infrared rays radiated from a heater penetrate through the fork 15, and no shadow of the fork 15 is case on the wafer W. |
