| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device by preventing an electrification damage due to plasma. SOLUTION: In a manufacturing method, a conductive material layer 13 is formed on a substrate 10 where a conductive part (gate insulation film) 11 is formed to have a continuity with a conductive part, an insulation film 14 is formed on the conductive material layer 13, a resist pattern 15 is formed on the insulation film 14, a resist pattern 15 is formed on the insulation film 14, the insulation film 14 is etched by the resist pattern 15, and at the same time the conductive material layer 13 is etched and an insulation pattern 16 and a conductive pattern (gate electrode) 17 are formed. Then, with the insulation pattern and the conductive pattern left, the resist pattern 15 is subjected to ashing elimination by the plasma method. |
