| 摘要 |
PROBLEM TO BE SOLVED: To prevent separation of a bonding pad that is caused during a step wherein a semiconductor chip, in which upper and lower interconnections are made flat by using an insulating film comprising SOG(spin-on glass) film, is sealed into a tape carrier package. SOLUTION: Dummy interconnections 41C-41G are formed below a bonding pad BP formed on a layer insulating film constituted of a three-layered film of a silicon oxide film 46, an SOG film 47 and a silicon oxide film 48. As a result, a direct contact area between the silicon oxide films 46 and 48 made of the same material is rendered large at the upper portions of the interconnections 41C-41G below the bonding pad BP, thereby improving the bonding property of the film. |
