| 摘要 |
PROBLEM TO BE SOLVED: To reduce the dispersion in the rate of coating formation and its fluctuation at the time of collimation sputtering and to obtain stably excellent properties of the coating forming rate by specifying the containing ratio in the crystal orientation in each part of a target measured by an X-ray analysis method and calculated in the sputtering face of a Ti target. SOLUTION: In a Ti target, the containing ratio A in the crystal orientation in each part of a target measured by an X-ray analysis method and calculated by the formula is regulated to <=80%, preferably, to <=50%. Furthermore, it is desired that the crystal structure of the target is composed of recrystallized one, and the average grain size in each part of the target is regulated to about <=500μm, preferably, to <=100μm. Furthermore, it is desired that the dispersion in the average grain size of each part to the average grain size of the whole body of the target in which the average grain size of each part is averaged is regulated to±20%. In this way, the fraction defective of a circuit of LSI or the like formed on a wafer can be improved.
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