SEMICONDUCTOR WAFER, AND MANUFACTURE THEREOF, AND SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND MANUFACTURE THEREOF

摘要

PROBLEM TO BE SOLVED: To provide an epitaxial wafer for a MIS(metal insulator semiconductor) device at a low cost, wherein the wafer is improved in gettering capacity and possessed of a gate oxide film (GOI) excellent in properties. SOLUTION: An epitaxial layer is made to grow on the main surface of a single crystal silicon wafer which is so tilted as to cross at right angles a crystal axis within an angle of 35 deg. from one of axes in the [010] direction in the (100) plane as a main plane and within an angle of 2.5 deg. to 15 deg. from a 100 crystal axis. By this setup, OSF(oxidation induced stacking fault) is restrained (a reduction in OSF dislocation density) from being induced on the surface (MISFET formation region) of the epitaxial layer, so that the silicon wafer of this constitution can be possessed of a heavy metal gettering capacity.