| 摘要 |
PROBLEM TO BE SOLVED: To provide the method of growing gallium nitride on a spinel substrate, where a plurality of buffer layers are utilized, at low cost, and to provide a method in which the rate of lattice mismatch, pertaining to a spinel substrate, and dislocation density can be reduced. SOLUTION: A supporting substrate 12 is prepared, a plurality of buffer layers 14 are positioned on one surface of the supporting substrate 12, and gallium nitride is grown on the spinel substrate. The plural buffer layers contain a first buffer layer 15 consisting of aluminum oxynitride(ALON) having a low mismatch rate against the spinel substrate. A second buffer layer 16 is positioned on the first buffer layer, and the layer 16 contains a plurality of layers 17 consisting of low dislocation density crystal ALON. A third buffer layer 18 consisting of aluminum nitride is positioned on the second buffer layer 16, and a fourth buffer layer 20 consisting of gallium nitride is positioned on the third buffer layer 18. A photonic device structure 22 is formed on the fourth buffer layer 20. |
