| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method for forming a structure for bonding that can perform the patterning of a polyimide film accurately. SOLUTION: In the main surface side of a silicon substrate 11, a polyimide film 15 is formed on a passivation film 14 formed at least on a bonding pad 13. Then, an etching mask layer 16 that is constituted of at least one type selected from a group consisting of silicon, silicon oxide, and silicon nitride is formed on the polyimide nitride film 15. A resist pattern 18 where an opening 17 located at the upper side of the bonding pad 13 is formed on the etching mask layer 16, and the etching mask layer 16 in the opening 17 is selectively etched with the resist pattern 18 as a mask to expose the polyimide film 15. Then, with the etching mask layer 16 as a mask, the polyimide film 15 and the passivation film 14 are successively etched to form a bonding window 19 for exposing the surface of the bonding pad 13.</p> |
