发明名称 Pressure contact semi-conductor devices
摘要 <p>1,133,358. Semi-conductor devices. ASSOCIATED ELECTRICAL INDUSTRIES Ltd. 3 Aug., 1967 [11 Nov., 1966], No. 50693/66. Heading H1K. In a method of assembling a semi-conductor device of the type in which a semi-conductor element 6, the end portion 13 of a conductive terminal 8, spring means 17 and a retaining circlip 18 are arranged in a stack and compressed into a housing 1 so that the element is in electrical contact with the conductive base 2 of the housing and the circlip engages a groove 20 in the wall 3 of the housing, the pressure to which the element is subjected in the completed device is caused to lie within a required range of values by measuring the height of the stack before it is compressed and then increasing the height, if necessary, by inserting one or more shims 21. The element is preferably a PNPN wafer, a molybdenum plate and a gold foil 7 being interposed between the lower surface electrode of the wafer and the copper base 2 and a molybdenum wafer 10 sandwiched between two gold foils being interposed between the upper annular surface electrode of the wafer and the terminal 8. Alternatively the element may be a diode, in which case the gate electrode 11 is omitted. The space in the housing above a mica washer 16 is sealed by a coating 23 of silicone rubber and a filling 22 of material such as " Araldite " (Registered Trade Mark).</p>
申请公布号 GB1133358(A) 申请公布日期 1968.11.13
申请号 GB19660050693 申请日期 1966.11.11
申请人 ASSOCIATED ELECTRICAL INDUSTRIES LIMITED 发明人 LEWIS COLIN BRIGHT
分类号 H01L23/31;H01L23/48;H01L29/00 主分类号 H01L23/31
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