| 摘要 |
PROBLEM TO BE SOLVED: To provide a structure for forming a capacitor consisting of, for example, a ferroelectric material or a high dielectric on a contact plug that is made of, for example, polysilicon plug without continuity failure with the contact plug, and its manufacturing method. SOLUTION: An insulating film 12 between capacity lower layers, a lower electrode b15, a lower electrode a14, and a ferroelectric 8 are sequentially formed on a structure where a polysilicon plug 4 and a contact pad 11 are formed on an n<+> layer 2. Then, the ferroelectric 8, the lower electrode a14, the lower electrode b15, and the film 12 between capacity lower layers are collectively manufactured so that the contact pad 11 is exposed. A metal wiring (for example, Al) is formed on an entire surface, and the metal wiring is subjected to etchback on the entire surface by means of, for example, reactive ion etching, so that the metal wiring remains only at the side wall part of the capacity. Then, an upper electrode 9 is formed and a film 10 between capacity upper layers is formed. |
