| 摘要 |
PROBLEM TO BE SOLVED: To provide a pattern layout structure for detecting the internal logic state of a MOS LSI without any contact by irradiating with laser beams from the backside of the LSI. SOLUTION: Impurity regions 6 are provided at the certain region of a substrate, for example, a wiring channel region 5 between cell group regions 4 of a semiconductor integrated circuit with a logic circuit that is constituted of a CMOS structure on a semiconductor substrate and are connected to the output part of a test target circuit by pattern wiring. The impurity regions 6 are electrically independent of a power supply voltage clamping region and a semiconductor device formation region for constituting an electrical circuit and used to apply laser beams from the backside of a substrate 1. |
