| 摘要 |
PROBLEM TO BE SOLVED: To provide a surface emission semiconductor laser device which is improved in current injecting efficiency and luminous efficiency by constituting the laser device in such a way that the light oscillated from an active layer is taken out through a dielectric multilayered reflecting film formed on an AlGaAs layer. SOLUTION: An upper multilayered reflecting film is constituted of an MgF/ ZnSe dielectric multilayered reflecting film 311 and, at the same time, a p-type AlAs layer 307 having a peripheral edge section constituted in a current constricting layer by selective oxidation and a p-type Al0.35 Ga0.05 As current injecting layer 308 are interposed between an active layer 305 and the reflecting film 311. The AlAs film 308 is composed of a single-layer film and the optical film thickness of the layer 308 is adjusted to m/4 (where, m is an odd number) of the oscillation wavelengthλ. The light emitted from the layer 308 is taken out through the reflecting film 311 on the current injecting layer 308. Therefore, semiconductor laser device which can make laser oscillation of <=860nm at an oscillation wavelength can be obtained and the element resistance of the device can be reduced. In addition, the efficiency of the device can be improved, because the current constriction only takes place near the active layer 305.
|
