| 摘要 |
PROBLEM TO BE SOLVED: To suppress diffusion of group II element and improve laser characteristics by providing a semiconductor layer which suppresses diffusion during manufacture of the semiconductor element, is suppressed. SOLUTION: Crystal growth is performed in molecular beam epitaxy, and first, formation is performed up to a p-Zn1-x Mgx Sy Se1-y (x=0.08, y=0.15) diffusion-suppressing layer 7. Then, a stripe is formed with a photoresist, and an unnecessary part of the diffusion-suppressing layer is removed. And, after removing the photoresist, a Cd-diffusing layer 8 comprising p-Zn1-a Cda Sb Se1-b (a=0.2, b=0.1) is crystal-grown, and heat treatment is performed to diffuse Cd. At this time, the diffusion depth of Cd is about 100nm. Then, a p- Zn1-x Mgx Sy Se1-y (x=0.08, y=0.15) clad layer 9, a p-ZnSz Se1-z (z=0.08) layer 10 and a ZnTe/ZnSe superlattice cap layer 11 are crystal-grown. Thereby a diffusion of group II elements is suppressed, and laser characteristics is improved. |
