| 摘要 |
PROBLEM TO BE SOLVED: To attain a high speed operation for the semiconductor device such as a power MOSFET or an IGBT incorporating a control circuit such as an overheat protection circuit and an overcurrent protection circuit or the like and to prevent malfunction due to a parasitic element simultaneously. SOLUTION: In order to prevent malfunction due to a parasitic npn transistor(TR) 29 of a MOSFET 32, when a gate terminal 2 is positive with respect to a source terminal 3, a switch circuit SW3 is closed, an when the gate terminal 2 is negative with respect to the source terminal 3, a switch circuit SW2 is closed, and even when the gate terminal 2 and the source terminal 3 are about at the same level and a drain terminal 1 reaches a high level, the switch circuit SW2 is closed. Thus, a leakage current from the drain terminal 1 to the gate terminal 2 is reduced, no deterioration is caused in a breakdown voltage of the drain. The isolation gate type semiconductor device incorporating a protection circuit suitable for a high speed operation is provided. |
