发明名称 METHOD AND APPARATUS FOR CLEANING SUBSTRATE
摘要 PROBLEM TO BE SOLVED: To make it possible to cope with a variety of uses and realize a cleaning having a very high degree of freedom by providing selectable heating and drying modes after cleaning a substrate with a cleaning liq. SOLUTION: A surface cleaner unit 21 cleans the semiconductor wafer surface, an inverter unit 27 or 28 inverts a semiconductor wafer, a back cleaner unit 23 cleans the wafer back surface, an inverted unit 27 or 28 inverts the wafer again, and an operating unit 91 selectively sets the heating and drying after the cleaning units and ultrasonic irradiation prior to the surface cleaning by the cleaner unit 21. A recipe controller 92 selects desired recipe, according to which a CPU 90 controls each unit, transport mechanism and ultraviolet lamps to allow various heating and drying modes to be selected after the wafer cleaning. The provision of the cleaning with the ultraviolet irradiation is selectable to realize a cleaning process at a very high degree of freedom.
申请公布号 JPH10242109(A) 申请公布日期 1998.09.11
申请号 JP19970062208 申请日期 1997.02.28
申请人 TOKYO ELECTRON LTD 发明人 YONEMIZU AKIRA;MATSUYAMA YUJI
分类号 H01L21/304;B08B1/04;B08B7/00;H01L21/00;(IPC1-7):H01L21/304 主分类号 H01L21/304
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