| 摘要 |
PROBLEM TO BE SOLVED: To realize an SRAM memory cell which reduces a node contact resistance and which can be operated at high speed in the SRAM memory cell which uses a salicidation technique, which uses polysilicon as a substrate and which comprises a load element. SOLUTION: The gate electrode 104ab of a transistor for drive and a connecting hole 109a which reaches an N-type diffusion layer 106ba are formed in an interlayer film 108 which covers a memory cell. A silicidation operation is performed, a silicide layer 110 is formed selectively, polysilicon is grown on it, and a high-resistance load is formed. The N-type difference layer 106ba, the gate electrode 104ab and a high-resistance-load heavily doped polysilicon region 111aa are connected to each other by the silicide layer 110, and a node contact resistance can be suppressed to be low. |
