| 摘要 |
PROBLEM TO BE SOLVED: To realize a nitride semiconductor element with high power efficiency and high quantum efficiency, whereby the light emission efficiency of an LED and the current and voltage thresholds of an LD can be reduced. SOLUTION: A nitride semiconductor element comprises a p-type contact layer 20 made of a p-type nitride semiconductor and a p-type electrode 21 contacted in an ohmic way with the p-type contact layer 20. The p-type contact layer 20 is made of either the nitride semiconductor doped by Mg with a concentration not smaller than 5×10<19> /cm<3> , or the p-type nitride semiconductor having a smaller band gap energy than a p-type nitride semiconductor layer present just below it, giving to the p-type contact layer 20 a thickness not lager than 500Å. |
