| 摘要 |
PROBLEM TO BE SOLVED: To form an excellent resonator end face by a mass-producing method in which the end face is formed by etching by epitaxially growing a semiconductor film on the side faces of grooves formed on the end face. SOLUTION: A semiconductor film 11 is selectively epitaxially grown by using a mask layer 8 as a mask. When the film 11 is formed in such a way, the thickness of the film becomes thicker on the bottoms of stripe-like grooves 10 mainly formed of (100) because the growth rate of the film on the bottoms is relatively fast, but the film hardly grows and is epitaxially grown on the side faces, because the side faces are mainly formed of (011)- and (0-1-1)-planes and the side faces are formed by etching. When (011)- and (0-1-1)-planes form the side faces, the film 11 formed on the side faces become a smooth surface of an atomic level due to the (011)- and (0-1-1)-crystal planes. Thereafter, an optical film is formed on the semiconductor film 11. |
