| 摘要 |
PROBLEM TO BE SOLVED: To manufacture a semiconductor laser with a small threshold by forming an active layer between insulating films. SOLUTION: An insulating film is deposited on a p-InP substrate 101. The insulating film is so patterned that a stripe of an opening part turns in a <011> direction of the substrate 101. Thereby an insulating film mask 102 is formed. Then, over the substrate 101 provided with the insulating film mask 102, a multiple quantum well active layer, an n-InGaAsP optical waveguide layer, and further, a first n-InP clad layer, and a second n-InP clad layer 107 are epitaxial-grown in this order. Then an n-type electrode 109 is formed on the insulating film mask 102 and the entire top surface of the second clad layer 107, and a p-type electrode 108 is formed on the rear surface of the substrate 101. In this case, because the n-type electrode 109 is formed extending over the entire surface of the second clad layer 107, a large contact region of the electrode and the n-type clad layer 107 is obtained, so that contact resistance is made small. |
