| 摘要 |
PROBLEM TO BE SOLVED: To realize a short-wavelength semiconductor laser obtained by using a new III-V compound semiconductor. SOLUTION: Concerning to a semiconductor laser having a p-n junction, a double heterostructure wherein a luminous layer 15 is interposed by p-type and n-type clad layers 14, 16 made out of GaAlN material is formed, on an n-type SIC substrate 61. The p-type clad layer 16 of this double heterostructure has a rib structure i.e., its one part is protruded. And current blocking layers 17 made of n-type BP are formed on both sides of this rib structure. |
