| 摘要 |
PROBLEM TO BE SOLVED: To obtain an excellent ohmic junction between an electrode structure and a p-type layer, by constituting the electrode structure of a multilayered film which is composed of an alloy containing Ni and Mg or in which Ni and Mg are laminated upon another as part of the electrode material for a gallium nitride compound semiconductor element. SOLUTION: A sapphire substrate 1, an amorphous GaN buffer layer 2, and a p-type Mg-doped GaN layer 3 are provided. The layers 2 and 3 are successively grown on the substrate crystal 1 by using a metal organic vapor phase epitaxial growth device. For example, trimethyl gallium(TMGa) and cyclopentadienyl magnesium(Cp2 Mg) are used as raw materials. Ni and Mg are vapor-deposited by the heater vapor deposition method, and Ti and Pt are vapor deposited by the electron beam vapor deposition method. Finally, Au is vapor deposited by the lift off method. After the Au is vapor-deposited, an At/Pt/Ti/Mg/Ni electrode 4 is formed by the lift off method. |
