| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a flat cell memory in which influence of parasitic capacity is eliminated and an on/of current ratio can be increased at the time of data reading. SOLUTION: Two metal bit lines MBL[0], MBL[1] are arranged in a unit memory section 51, cells of the prescribed numbers of cell array 51D are arranged in one unit group, a local bit line in the center of a local bit line coupled to the metal bit lines MBL[0], MBL[1] is coupled to a fixed ground terminal GND1, a cell lastly selected by using an inside and outside cell selecting section 51B and a left and right side cell selecting section 51C, 51E is coupled between the metal bit lines MBL[0], MBL[1] and the fixed ground terminal GND1.</p> |
