| 摘要 |
PROBLEM TO BE SOLVED: To attain a low resistance while limiting the area by arranging ohmic electrodes alternately and oppositely on the conductive region of a semiconductor thereby constituting a pair of ohmic electrodes. SOLUTION: A conductive region 102 is formed by implanting ions selectively into a semiinsulating GaAs substrate, for example, and first and second ohmic electrodes 101a, 101b are arranged thereon interdigitally at regular intervals while facing each other thus constituting a pair of ohmic electrodes. Since a pair of ohmic electrodes are arranged interdigitally while facing each other in a resistor, the length B of facing side is equal to the product Axn, i.e., the length A multiplied by the number of pairs n of electrode (4 pairs) facing interdigitally. For example, a resistance of 5Ωcan be attained with an area of 1,000μm<2> for 4 pairs of electrode and the area can be decreased or a lower resistance can be attained for the same area.
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