SEMICONDUCTOR WAFER, MANUFACTURE THEREOF, SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF

摘要

PROBLEM TO BE SOLVED: To suppress the dislocation in an epitaxial wafer to obtain a good semiconductor wafer by providing a semiconductor single crystal layer on a semiconductor substrate contg. B and C. SOLUTION: An Si wafer 101 is implanted with B ions 103 and C ions 104, heat treated at 100 deg.C in an H-atmosphere of an epitaxial growth furnace for 15min to recover the ion implanting damage, a layer 105 of high-concn. B and C is formed in the Si wafer 101, a semiconductor single crystal layer 102 is formed on the surface of the wafer 101 contg. the high-concn. layer 105, thereby suppressing the dislocation in the epitaxial wafer to produce a good Si wafer 101.