| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for the manufacture and structure of a trench- type stacked capacitor with improved breakdown voltage strength, applicable to high-density memory units. SOLUTION: A number of columnar etching sacrifice regions, for example, a plurality of columnar silicon dioxide regions 361, is formed by utilizing geometric tridimentional shape which is formed when an etching mask layer 38 is formed. Subsequently, a second conductive layer (polysilicon layer) 39 is formed in order to cover the plurality of the etching sacrifice regions 361, and further the plurality of the columnar etching sacrifice regions 361 are removed by etching. Since the etching mask layer 38 and part of a chemical oxide layer 37 thereunder have been etched, the harmful influences of residues from the etching mask layer 38 and the partial chemical oxide layer 37 which would be encountered with conventional methods can be avoided. |
