PARTICLE SCATTERING ANALYSIS METHOD AND DEVICE AND MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To analyze the surface of a sample with a fine surface structure such as a semiconductor device and an insulator sample such as a dielectric with a high resolution by preventing the charge-up of the sample surface in a surface analysis method using the ion scattering method. SOLUTION: Incidence ion beams 20 are transmitted through a thin film 6 for neutralization and only obtained neutral particle is applied to the surface of a sample 8 to prevent the surface of the sample 8 from being charged up. A flight time from the surface of the sample 8 to a detector 10 of a rear scattered random particle 23 is measured, the energy of the rear scattered random particle 23 is measured, and the mass of the sample surface atom is obtained from the energy value. With the sample incidence particle as a neutral particle, the charge-up of the sample surface can be prevented and even a sample with a complex surface pattern can be subjected to surface analysis with a high resolution. Also, the damage on the wafer surface in the manufacturing process of a semiconductor device can be constantly analyzed and grasped, the manufacture of a faulty element can be minimized, and a high-resolution semiconductor device can be manufactured with a high yield.