| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a high-dielectric capacitor and a capacitor that is manufactured by it. SOLUTION: A conductive plug 303 is formed on a semiconductor substrate 300 and a barrier layer 307a consisting of a high-melt-point metal and a filler is formed on it, thus shielding the diffusion path of metal and oxygen by filling a crystal grain boundary being present in the barrier layer into the filler. Then, after lower electrodes 309a and 311a and a high-dielectric film 313 are sequentially formed on the barrier layer 307a, a high-temperature heat treatment is performed in oxygen atmosphere. An upper electrode 315 is formed on the high-dielectric film 313, thus improving the diffusion prevention function of the barrier layer 307a and an electrode layer and hence obtaining a reliable high-dielectric capacitor that can be applied to an ultra-high-integration semiconductor device. Especially, the diffusion of metal or oxygen can be prevented even by a barrier layer that is approximately 100Å, an area where a film other than platinum contacts the high-dielectric film can be minimized and a high-dielectric capacitor with improved diffusion prevention characteristics and improved leakage current characteristics can be obtained. |
