| 摘要 |
PROBLEM TO BE SOLVED: To reduce resistance of a gallium nitride based semiconductor layer, by a method wherein, while a gallium nitride based semiconductor layer doped with P-type impurities is grown by using an organic metal compound vapor deposition method, or after the layer is grown, the layer is irradiated with infrared rays, at a high temperature. SOLUTION: A sapphire substrate 2 is set on a susceptor 3 installed in a reaction furnace. After the inside of the furnace is vacuumized, the substrate is heated in a hydrogen atmosphere, by using an RF coil 4, and cleaned. The substrate is cooled, and a GaN buffer layer is grown by making trimethyl gallium(TMG), NH3 and hydrogen as carrier flow. Supply of TMG only is stopped, the growth temperature is raised up to, e.g. 1050 deg.C, and the substrate growth surface begins to be irradiated with infrared rays by using an infrared lamp 11. The wavelength of infrared rays is adjusted, e.g. in the range of 3200-3800cm<-1> by using a bandpass filter 10. A GaN film doped with Mg is grown by making TMG again flow and further making Cp2 Mg flow. |
