| 摘要 |
<p>PROBLEM TO BE SOLVED: To improve the yield of a semiconductor wafer by reducing the amount of foreign matters which adhere to the wafer in a dry etching process. SOLUTION: A dry etching device performs etching on a semiconductor wafer W mounted on lower and upper electrodes 20 and 30 counterposed to each other in a treating chamber 10 by generating plasma of a reactive gas 71 by supplying high-frequency power across the electrodes 20 and 30 from a high-frequency power source 40. The peeling of hydrophobic reaction products of etching from the surfaces of susceptors 22 and 32 which are respectively arranged around the electrodes 20 and 30 and composed of quartz is prevented by improving the affinity (adhesion) between the hydrophobic reaction products and the surfaces of the susceptor 22 and 32 by giving a hydrophilic property to the surfaces of the susceptors 22 and 32 by introducing such a material as silicon, carbon, etc. The yield of the semiconductor wafer W can be improved, because the amount of foreign matters which are produced from peeled reaction products of etching and adhere to the surface of the wafer W can be reduced.</p> |
